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Clicking on the donut icon will load a page at altmetric. Find more information on the Altmetric Attention Score and how the score is calculated. Semiconductor nanowires are nanoscale structures holding promise in many fields such as optoelectronics, quantum computing, and thermoelectrics. Nanowires are usually grown vertically on -oriented substrates, while is the standard in semiconductor technology.


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We describe a novel approach to achieve low resistance electrical contacts to nanowires via a gradual interface based on p-doped InAsP. To obtain high vertical yield, which is necessary for future applications, we investigate the effect of the introduction of dopants on the nanowire growth.

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Nanowire growth conditions; optoelectronic characterization processing and measurements; SEM and TEM characterization details; gradual interface structural characterization; and doped nanowires growth rate and Zn influence additional discussion. View Author Information. Cite this: Nano Lett. Article Views Altmetric -.

"Large Diameter (3"), Indium Phosphide, (100) Oriented Single Crystal Growth"

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    Chemical Reviews , 15 , George G. Bryant, Ceramic Engineer, George G. Bryant, Ceramic Engineer,. Author and Article Information. Joseph L. Dec , 4 : 6 pages.

    Crystal Growth Experiments Under Microscope

    Published Online: July 10, Article history Received:. Views Icon Views. Issue Section:. Hurle, D. Hurle, ed. Walker, J. Benz, ed. Dopant transport during semiconductor crystal growth.

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    Axial versus transverse magnetic fields. Bryant, G. Forced convection during liquid encapsulated crystal growth with an axial magnetic field. You do not currently have access to this content. Learn about subscription and purchase options. Product added to cart. Accepted Manuscript Alert. Article Activity Alert. Cited By Web Of Science 4. Fluids Eng January Prediction of turbulent flow over a flat plate with a step change from a smooth to a rough surface using a near-wall RANS model J.

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